Topological-metal to band-insulator transition in (Bi(1-x)In(x))2Se3 thin films.

نویسندگان

  • Matthew Brahlek
  • Namrata Bansal
  • Nikesh Koirala
  • Su-Yang Xu
  • Madhab Neupane
  • Chang Liu
  • M Zahid Hasan
  • Seongshik Oh
چکیده

By combining transport and photoemission measurements on (Bi(1-x)In(x))(2)Se(3) thin films, we report that this system transforms from a topologically nontrivial metal into a topologically trivial band insulator through three quantum phase transitions. At x ≈ 3%-7%, there is a transition from a topologically nontrivial metal to a trivial metal. At x ≈ 15%, the metal becomes a variable-range-hopping insulator. Finally, above x ≈ 25%, the system becomes a true band insulator with its resistance immeasurably large even at room temperature. This material provides a new venue to investigate topologically tunable physics and devices with seamless gating or tunneling insulators.

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عنوان ژورنال:
  • Physical review letters

دوره 109 18  شماره 

صفحات  -

تاریخ انتشار 2012